| Customization: | Available |
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| Type: | Position Sensor |
| Output Signal Type: | Switching Type |
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| Project | Specification table | ||
| Sensing type | Diffuse reflection | Mirron | Through beam reflection |
| Minimum detection | / | Opaque object Φ20 .0x0 .8mm | Opaque object Φ8 .0x0 .8mm |
| Tandard target | 100x100mm White paper | Opaque object Φ25.0x0.8mm or more | Opaque object Φ10 .0x0 .8mm |
| Zero sensitivity adjustment | Yes | ||
| Light source | 940nm infrared modulated light | 650nm infrared modulated light | 940nm infrared modulated light |
| Hysteresis | <15% Scanning distance | <2% Scanningdistance | |
| Operating Voltage | 12~24VDC±10% impulse ( P-P) 10% | ||
| Current consumption | <30mA | ||
| Load current | 100mA | ||
| Leakage current | <0.01mA No Load | ||
| Residual voltage | < 1.5VDC(Load current 100mA, wire 2M ) | ||
| Repeatability | <2% Scanning distance | ||
| Response frequency | 300HZ | 600HZ | |
| Reverse polarity protectiom | Yes | ||
| Short circuit protection | Yes | ||
| Output type | NPN . NO/ NPN .NC PNP. NO/ PNP. NC NPN . NO. NC/ PNP.NO. NC | ||
| Response time | 0 .3ms | ||
| Insulation resistance | >20MΩ( Between the charging part and the outer casing) | ||
| Dielectric strength | 1000VDC 50~60Hz 1 min ( Between the charging part and the outer casing) | ||
| Ambient temperature | -10~50ºC(Withou icing or condensation ) | ||
| Ambient humidity | 35~85% HR Relative humidtuy | ||
| Ambien illumination | Sunlight :2,000LX , Light:1,000LX | ||
| Storage temperature | -20~60ºC(Withou icing or condensation) | ||
| Storage humidity | 35~95% HR Relative humidtuy | ||
| Protection degree | IP65 | ||
| Connection | Φ4.0x2M/2-wires Φ4.0x2M/3-wires Φ4.0x2M/4-wires Φ4.0Lead 150mm with M8 connector Direct with M12 connector | ||
| Material | ABS+PC | ||
| Weight | Approx: 76g/78g/78.5g/190g | ||
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